gan hybrid power amplifier HT1818-30A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 1 / 8 version 1.0 product features applications ? gan on sic hemt ? in/out impedance matching ? surface mount hybrid type ? small size & mass ? high efficiency ? low cost ? custom design available ? rf sub-systems ? base station ? repeater ? lte system description the HT1818-30A is designed for lte repeater & rf sub-systems application frequencies from 1805 ~ 1880mhz this amplifier uses gan hemt technology which performs high breakdown voltage, high efficiency. high in/output impedance, high power density. electrical specifications @ v ds =28v, ta=25 parameter unit min typ max condition frequency range mhz 1805 - 1880 zs = zl = 50 ohm power gain db 36 38 40 amp : idq1 = 110ma idq2 = 130ma gain flatness - 0.8 2 input return loss - -10 -8 pout @ average dbm - 37 - pout @ psat dbm 44 45 - pulse width=50us, 10%duty aclr @ bw 10mhz lte (papr 7.5db) dbc - -32 -28 non dpd - -52 - with dpd drain efficiency % 25 26 - pout @ average ids ma - 680 710 supply voltage v - -3.0 -2.0 gate bias (vgs1 and vgs2) v 27.5 28 - main bias(vds) caution the drain voltage must be supplied to the device after the gate voltage is supplied turn on : turn on the gate voltage supply and last turn on the drain voltage supplies turn off : turn off the drain voltage and last turn off the gate voltage note 1. aclr measured pout=37dbm @ fc 10mhz / 9.015mhz lte 10mhz 1fa papr=7.5db @ 0.01% probability on ccdf, (dpd engine: optichron op6180) 2. ht series have internal dc blocking capacitors at the rf input and output ports mechanical specifications parameter unit typ remark mass g 2 - dimension L 20.5 x 15 x 3.5 - package type : np-1el
gan hybrid power amplifier HT1818-30A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 2 / 8 version 1.0 absolute maximum ratings parameter unit rating symbol gate-source voltage v -10 ~0 vgs1 vgs2 drain-source voltage v 50 vds gate current ma 9.3 ig operating junction temperature c 225 t j operating case temperature c -30 ~ 85 t c storage temperature c -40 ~ 100 t stg *maximum input level dbm 25 pin * test condition : pulse width=50us, 10%duty operating voltages & input level * test condition : pulse width=50us, 10%duty parameter unit min typ max symbol drain voltage v - 28 - vds gate voltage (on-stage) v - -3 -2 vgs 1 gate voltage (on-stage) v - -3 -2 vgs 2 gate voltage (off-stage) v - -8 - vgs 1 gate voltage (off-stage) v - -8 - vgs 2 idq1 ma 105 110 115 idq1 idq2 ma 120 130 140 idq2 *rf input level dbm - - 20 pin block diagram gan on sic gan on sic
gan hybrid power amplifier HT1818-30A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 3 / 8 version 1.0 application circuit part list location model no. spec. maker c6, c8 tajd106m050r 10uf / 50v avx c1, c3 taja475m016r 4.7uf / 16v avx c5, c7 grm32er72a225ka35l 2.2uf/100v murata c2, c4, grm1885c1h104ba01d 100nf murata evaluation board ro4350b 2layer, 30mil rogers
gan hybrid power amplifier HT1818-30A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 4 / 8 version 1.0 performance charts * bias condition @ idq1= 110ma, idq2= 130ma, vds= 28v, ta=25 power gain vs. frequency psat vs. frequency 34 35 36 37 38 39 40 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 power gain [db] frequency[ghz] power gain @pout=37dbm 42 43 44 45 46 47 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 psat [dbm] frequency[ghz] psat @pulse width 50us (duty 10%) aclr vs. frequency drain efficiency vs. frequency -42 -40 -38 -36 -34 -32 -30 -28 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 aclr [dbc] frequency[ghz] aclr_l @pout=37dbm aclr_u @pout=37dbm 22 24 26 28 30 32 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 efficiency [%] frequency[ghz] drain efficiency @pout=37dbm ids1 vs ids2 vs. frequenc y total ids vs. frequency 100 200 300 400 500 600 700 800 900 50 60 70 80 90 100 110 120 130 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 ids[ma] frequency[ghz] ids1 ids2 580 600 620 640 660 680 700 720 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 ids[ma] frequency[ghz] total ids @pout=37dbm
gan hybrid power amplifier HT1818-30A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 5 / 8 version 1.0 performance charts * bias condition @ idq1= 110ma, idq2= 130ma, vds= 28v, ta=25 power gain vs. output power drai n efficiency vs. output power 32 34 36 38 40 42 34 35 36 37 38 39 power gain [db] output power[dbm] 1805mhz 1842.5mhz 1880mhz 15 17 19 21 23 25 27 29 31 33 35 37 39 34 35 36 37 38 39 efficiency [%] output power[dbm] 1805mhz 1842.5mhz 1880mhz aclr vs. output power ids vs. output power -44 -42 -40 -38 -36 -34 -32 -30 -28 34 35 36 37 38 39 aclr [dbc] output power[dbm] 1805mhz 1842.5mhz 1880mhz *lte 10mhz (papr=7.5db) w/o dpd 200 300 400 500 600 700 800 900 34 35 36 37 38 39 ids[ma] output power[dbm] ids @1805mhz ids @1842.5mhz ids @1880mhz
gan hybrid power amplifier HT1818-30A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 6 / 8 version 1.0 package dimensions (type: np-1el) * unit: mm[inch] | tolerance: 0.15[.006] top view side view bottom view pin description pin no function pin no function pin no function pin no function 1 rf input 4 vgs1 8 gnd 11 gnd 2 gnd 5 vds 9 gnd 12 gnd 3 gnd 6 vgs2 10 rf output 13 gnd - - 7 vds - - 14 gnd recommended pattern recommended mounting configuration * mounting configuration notes 1. for the proper performance of the device, ground / thermal via holes must be designed to remove heat. 2. to properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. we recommend the mounting scre ws be added near the heatsink to mount the board 3. in designing the necessary rf trace, width will depend upon the pcb material and construction. 4. use 1 oz. copper minimum thickness for the heatsink. 5. do not put solder mask on the backside of the pcb in the region where the board contacts the heatsink 6. we recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance . detail pattern ?a?
gan hybrid power amplifier HT1818-30A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 7 / 8 version 1.0 precautions this product is a gallium nitride transistor. the gallium nitride transistor requires a negative voltage bias which operates alongside a positive voltage bias. these biases are applied in accordance to the sequence during turn-on and turn-off. the pallet amplifier does not have a built-in bias sequence circ uit. therefore, users need to either apply positive voltages an d negative voltages in the required sequence, or ad d an external bias circuit to this amplifier. the required sequence for power supply is as follows. during turn-on 1. connect gnd. 2. apply vgs1 and vgs2. 3. apply vds. 4. apply the rf power. during turn-off 1. turn off rf power. 2. turn off vds, and then, turn off the vgs1 and vgs2. 3. remove all connections. turn on turn off - sequence timing diagram -
gan hybrid power amplifier HT1818-30A k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 8 / 8 version 1.0 reflow profile * reflow oven settings zone a b c d e f temperature(c) 30 ~ 150 150 ~ 180 180 ~ 220 220 ~ 220 235 ~ 240 2 ~ 6 / sec drop belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * measured reflow profile ordering information part number package design HT1818-30A -r (reel) -b (bulk) -evb (evaluation board) revision history part number release date version modification data sheet status HT1818-30A 2013.12.20 1.0 electrical specification, changed package - HT1818-30A 2013.09.20 0.6 changed specification preliminary HT1818-30A 2013.04.20 0.5 changed case temperature preliminary rfhic corporation reserves the right to make changes to any prod ucts herein or to discontinue any product at any time without n otice. while product specifications have been thoroughly examined for reliability, rfhic corporation strongly recommends buy ers to verify that the information they are using is accurat e before ordering. rfhic corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including wi thout limitation consequential or incidental damages. rfhic products are not intended for use in life support equipment or application where malfunction of the product can be expect ed to result in personal injury or death. buyer uses or sells such products for any such unintended or unauthorized application, buyer shall i ndemnify, protect and hold rfhic corporat ion and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. sales, inquiries and support should be directed to the local au thorized geographic distributor for rfhic corporation. for custo mers in the us, please contact the us sales team at 919- 677-8780. for all other inquiries, please contact the international sales team at 82-31-250-5078.
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